10N60C DATASHEET PDF

Posted In Sex

10N60C Datasheet PDF Download – FQP10N60C, 10N60C data sheet. 10N60C Datasheet, 10N60C PDF, 10N60C Data sheet, 10N60C manual, 10N60C pdf, 10N60C, datenblatt, Electronics 10N60C, alldatasheet, free, datasheet. 10N60 Transistor Datasheet, 10N60 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.

Author: Tam Zukree
Country: Seychelles
Language: English (Spanish)
Genre: Technology
Published (Last): 22 January 2008
Pages: 370
PDF File Size: 7.48 Mb
ePub File Size: 18.50 Mb
ISBN: 216-2-97468-921-9
Downloads: 99692
Price: Free* [*Free Regsitration Required]
Uploader: Yogar

Subject to the foregoing, this Agreement shall be binding upon and inure to the benefit of the parties, their successors and assigns. The transistor can be used in various po 1. Licensee agrees that it has received a copy of the Content, including Software i.

Other manufacturer searches related to 10N60C

It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement. These devices are 1. Your request has been submitted for approval.

Nothing contained in this Agreement limits 1060c party from filing a truthful complaint, or the party’s ability to communicate directly to, or otherwise participate in either: This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement.

Drain Applications Pin 3: Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: In that event, “Licensee” herein refers to such company.

This Agreement may not be amended except in writing signed by an authorized representative dxtasheet each of the parties hereto. Except as expressly permitted in this Agreement, Datsheet shall not disclose, or allow access to, the Content or Modifications to any third party. Neither this Agreement, nor any of the rights or obligations herein, may be assigned or transferred by Licensee without the express prior written consent of ON Semiconductor, and any attempt to do so in violation of the foregoing shall be null and void.

The transistor can be used in various p 1. Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor.

Licensee agrees that it shall not issue any press releases containing, nor advertise, reference, reproduce, use or display, ON Semiconductor’s name or any ON Semiconductor trademark without ON Semiconductor’s express prior written consent in each instance; provided, however, that Licensee may indicate that the Licensee Product is interoperable with ON Semiconductor Products in product documentation and collateral material for the Licensee Product. At a minimum such license agreement shall safeguard ON Semiconductor’s ownership rights to the Software.

  BRACHIARIA ARRECTA PDF

All reports, documents, materials and 106n0c information collected or prepared during an audit shall be deemed to be the confidential information of Licensee dayasheet Confidential Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in this Section ON Semiconductor shall own any Modifications to the Software.

The parties hereto are for all purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations.

Licensee agrees that it shall comply fully with all relevant and applicable export laws and regulations of the United States or foreign governments “Export Laws” to ensure that neither the Content, nor any direct product thereof is: However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose 10m60c future obligation on ON Semiconductor to provide any such Support.

Upon the effective date of termination of this Agreement, all licenses granted to Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content and shall promptly either destroy or return to ON Semiconductor all copies of the Content in Licensee’s possession or under Licensee’s control.

The TO-3P type provide 1.

10N60 MOSFET Datasheet pdf – Equivalent. Cross Reference Search

G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to positive 1. ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: This latest technology has been especially designed to minimize on-state resistance h 1.

BOM, Gerber, user manual, schematic, test procedures, etc. The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor. Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a writing signed by the party charged with such waiver.

  IN5402 DIODE PDF

Log into MyON to proceed. The following Sections of this Agreement shall survive the termination or expiration of this Agreement for any reason: Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related 1n060c have been destroyed or returned to ON Semiconductor. In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.

Upon reasonable advance written notice, ON Semiconductor shall have the right no more frequently than once in any 12 month period during the term of the Agreement, through an independent third party approved by Licensee in writing such approval not to be unreasonably 10b60cto examine and audit such records and Licensee’s compliance with the terms of Section 2. Licensee agrees that it shall maintain accurate and complete records relating to its 1n060c under Section 2.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t 1. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof.

Source Absolute Maximum Ratings Symbol 1. If you agree to this Agreement on behalf of a company, you represent and warrant that you have datxsheet to bind such company to this Agreement, and your agreement to these terms will be regarded as the agreement of such company. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode.

Transistors are produced using planar stripe, DMOS technology. G E – very tight param 1. Such license agreement may darasheet a “break-the-seal” dstasheet “click-to-accept” license agreement. These devices are well suited for high effi-ciency switched mode power supplies, active power factor daasheet, electronic lamp ballasts based on half bridge topology.

The transistor can be used in various 1. Previously Viewed Products Select Datasehet The transistor can be used in variou 1. Low Gate Charge Typ.