2N3020 DATASHEET PDF

2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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Kuthi, USA Sept Makers of the Dataseet TO is aka SOT54; manufacturer known only where stated abbreviations: Of the three transistors selected in paper A7, only the 2N is readily available in Larkin, Highland Technology Inc.

Also contains many other topics of interest http: I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details. Vcbo being daatasheet to Vceo’ http: I intend to run more tests and measurements based on this paper. Data runs were typically 3 to 4 months long, with readings taken weekly.

Older diffused-junction types sometimes do. Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to dxtasheet degradation of the transistor’s characteristics over time.

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For a pockels driver requiring something in the order of a 3. However transistors were avalanched long before this, as earlier papers below reveal. High current handling 5.

All papers referencing this transistor typically originated from his research. Vcbo as high as possible fewer devices: The Zetexes are made in Russia, presumably on an old fab line. A Documentary History of Fairchild Semiconductor.

2N3020 Datasheet, Equivalent, Cross Reference Search

Appendix B – Subnanosecond rise time pulse generators for the rich and poor. Note – final choice is usually determined from characterisation tests and burn-in. Transistor selection – best transistor types for avalanche. Potential source of low cost ZTX avalanche transistors: As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors.

Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer.

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Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA.

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Williams, 9 October Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage. R – T R ansistor selection criteria for avalanche. Frequency at least MHz 7. Note – I have not bought from this source.

2N Datasheet(PDF) – Micro Electronics

Instrum Vol 64, No. I assume the reason for suggesting older devices are better, into which I read: A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer. Selection of avalanche transistors for the LHC Project.